岳珂;庞磊;陈炫宇;叶明天;张乔根;陶风波;

• 1:国网陕西省电力公司西安供电公司
• 2:电气设备电气绝缘国家重点实验室(西安交通大学)
• 3:国网江苏省电力有限公司电力科学研究院

摘要(Abstract)：

掌握晶闸管反向恢复期损伤机理对晶闸管保护设计和探索反向恢复过程相关机理具有重要意义。为研究高压晶闸管在反向恢复期内脉冲作用下的损伤机理,分别采用脉冲试验法、软件仿真法以及芯片失效分析法,对晶闸管进行了反向恢复期内脉冲损伤试验,建立晶闸管器件–电路模型,对反向恢复期内脉冲作用过程进行数值模拟,并通过芯片失效现象分析其失效机理。结果表明,正常门极触发导通和反向恢复期内二次导通均在晶闸管靠近门极处的阴极边缘形成初始导通通道,并通过载流子的扩散拓宽通道,其中后者的电流密度较大,且由于反向恢复期最后关闭区域存在残留的载流子,在这个区域能够形成替代通道;反向恢复期内由于晶闸管门极区域电流密度过大、电流上升率过高,门极附近一带容易烧毁,表明晶闸管反向恢复期脉冲损伤属于热致损伤。

关键词(KeyWords)： 晶闸管;暂态特性;反向恢复;冲击电压;损伤机理

Abstract:

Keywords:

基金项目(Foundation): 国家电网公司科技项目(SGJSDK00KJJS1800292)~~

作者(Author): 岳珂;庞磊;陈炫宇;叶明天;张乔根;陶风波;

Email:

DOI: 10.13335/j.1000-3673.pst.2019.1109

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